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Diodes are broadly utilized semiconductor product. A rectifier diode is actually a two-lead semiconductor which allows current to pass in only 1 route. Normally, p-N junction Diode is fashioned by joining with each other n-type and p-type semiconductor resources. The p-type side is termed the anode along with the n-type aspect is named the cathode. Many varieties of diodes are employed for a broad range of applications. Rectifier diodes undoubtedly are a essential element in electric power provides in which they are really accustomed to change AC voltage to DC voltage. The Zener diodes are useful for voltage regulation, stopping unwelcome variations in DC materials inside of a circuit.

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Rectifier Diode Circuit Working,Equally the n-type & p-type materials are chemically combined with a special fabrication technique which results in the formation of a p-n junction. This p-N junction has two terminals which can be referred to as as electrodes and due to this reason, it known as to be a DIODE (Di-ode).If an external DC supply voltage is applied to any electronic product through its terminals, it known as as Biasing.Forward Biased Diode:Forward Biasing: In a pN junction diode, the positive terminal of a voltage source is connected to the p-type side, and also the negative terminal is connected to the n-type facet, the diode is said to be in forwarding bias condition.The electrons get repelled by the negative terminal of DC voltage supply and drift towards the positive terminal.So, under the influence of applied voltage, this electron drift causes latest to flow in a semiconductor. This present is termed as Drift current. As majority carriers are electrons, recent in n-type is the electron present.

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Unbiased Rectifier Diode:When no voltage supplied to a rectifier diode then it is termed as an Unbiased Diode, N-side will have a majority number of electrons, and very few numbers of holes (due to thermal excitation) whereas the p- facet will have a majority charge carriers holes and very few numbers of electrons.In this process, free electrons from N-side will diffuse (spread) into the p aspect and recombine takes place in holes present there, leaving +ve immobile (not moveable) ions in N- facet and creating -ve immobile ions in the p side of the diode.The immobile in the n-type side near the junction edge. Similarly, the immobile ions in the p-type facet near the junction edge. Due to this, numbers of positive ions and negative ions will accumulate at the junction. This region so fashioned is named as depletion region.At this region, a static electric field identified as as Barrier potential is created across the pN junction of the diode.It opposes the further migration of holes and electrons across the junction.

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